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介绍氧化钨基永久性的电可重编程的可变电阻器作为用于电子神经网络的模拟突触记忆联接器。该器件具有类晶体管的多层薄膜器件结构，它是依次由直流溅射和电子束蒸发工艺沉积到一个绝缘衬底，即衬底／Ni／WO3／SiO／Cr2O3／SiO／Al。用电压控制H+离子可逆地内插和去插到WO3薄膜来调制电阻。一个吸湿的Cr2O3薄膜用作H+离子源。该器件电阻可以特制和稳定在很宽的动态范围（约105～109Ω），并且编程速度受控制电压调制。讨论了该器件在响应速度、可逆性、稳定性和循环性方面的适应能力。
A tungsten oxide based permanent electrically reprogrammable rheostat is introduced as a simulated synaptic memory connector for electronic neural networks. The device has a transistor-like multilayer thin film device structure that is deposited onto an insulating substrate, ie substrate / Ni / WO3 / SiO / Cr2O3 / SiO / Al, in turn by a DC sputtering and electron beam evaporation process. The voltage is controlled by H + ions reversibly interpolating and removing to the WO3 thin film to modulate the resistance. A hygroscopic Cr2O3 film is used as the H + ion source. The device resistance can be tailored and stabilized over a wide dynamic range (approximately 105 to 109Ω) and the programming speed is controlled by a regulated voltage. It discusses the device’s ability to respond to speed, reversibility, stability and cycling.