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Rohm公司近日与Fraunhofer研究所携手,采用Rohm的碳化硅MOSFET和栅驱动装置为瑞士弗里堡的太阳能系统研究中心开发了一款10kW三级不间断电源逆变反相器,目的主要是展示碳化硅器件在应用层面的性能表现。碳化硅器部件具有很好的性能潜力,可有效降低反相器系统的能耗,通过提高效率和操作频率以缩小热沉热槽和感应零件的尺寸。相较传统逆变反相器,新型逆变反相器由于碳化硅晶体管的开关能量较小,开关频率可以提升3-9倍,因此也有效减小了无源部件的尺寸。
Rohm recently teamed up with the Fraunhofer Institute to develop a 10kW, three-stage, uninterruptible power supply inverter inverter for the Solar Systems Research Center in Friborg, Switzerland, using Rohm's silicon carbide MOSFETs and gate drivers to demonstrate carbonization Performance of silicon devices at the application level. Silicon carbide components have good performance potential, which can effectively reduce the energy consumption of the inverter system, by increasing efficiency and operating frequency to reduce the size of heat sink and induction components. Compared with the traditional inverter inverter, the new inverter inverter can improve the switching frequency by 3-9 times due to the smaller switching energy of the silicon carbide transistor, thereby effectively reducing the size of the passive component.