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为了逻辑器件高速化 ,必须做到布线低阻化及层间介质膜低电导率。为此 ,本次采用低阻Ｃｕ布线和低电导率ＨＳＱ (ＨｙｄｒｏｇｅｎＳｉｌｓｅｑｕｉｏｘａｎｅ) ,首次制作了Ｃｕ/ＨＳＱ结构。采用如下新工艺克服了制作上的难题 (ＨＳＱ膜劣化 )。即 :(1)采用金属 (ＴｉＮ)掩模?
In order to speed up the logic device, it is necessary to achieve the low resistance of the wiring and the low conductivity of the interlayer dielectric film. To this end, the first use of low-resistance Cu wiring and low conductivity HSQ (HydrogenSilsequioxane), for the first time produced a Cu / HSQ structure. The following new process to overcome the production of the problem (HSQ film degradation). That is: (1) using metal (TiN) mask?