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用脉冲激光淀积方法在Ｐｔ／ＴｉＯ２／ ＳｉＯ２／ Ｓｉ（００１） 衬底上制备了掺Ｔａ 的ＰＺＴ 薄膜。此薄膜显示了理想的铁电性。漏电流特性表明这种异质结构中Ｓｃｈｏｔｔｋｙ 场发射机制起主要作用。扫描电镜形貌照片表明ＰＺＴ 薄膜结晶很好并且异质结构界面无明显扩散。
A Ta doped PZT thin film was prepared on a Pt / TiO2 / SiO2 / Si (001) substrate by pulsed laser deposition. This film shows the ideal ferroelectricity. The leakage current characteristics indicate that the Schottky field transmitter plays a major role in this heterostructure. Scanning electron micrographs showed that the PZT films crystallized well and the heterogeneous interface did not diffuse significantly.