Influence of Si buffer layer on the giant magnetoresistance effect in Co/Cu/Co sandwiches

• 作 者: LI Guanxiong SHEN Honglie SHEN
• 机 构: State Key Laboratory of Functional Materials for Informatics
• 出 处: 中国科学E辑（英文版）
• 发表日期: 2004年期
• 关键词: buffer layer giant magnetoresistance anisotropy sandwich
• 基金项目: Shanghai R&D Foundation for Application Materials

The Co/Cu/Co sandwiches with a semiconductor Si buffer layer were prepared by high vacuum electron-beam evaporation. The influence of the Si buffer layer with different thickness on the giant magnetoresistance (GMR) effect in the Co/Cu/Co sandwiches was investigated. It was found that the GMR showed an obvious anisotropy when the thickness of Si buffer layer was larger than or equal to 0.9 nm, and that the GMR was basically isotropic with an Si buffer layer thinner than 0.9 nm. The anisotropic behavior of GMR can be ascribed to the in-plane magnetic anisotropy in the sandwiches. Due to the interdiffusion at the Si buffer/Co interface, a Co2Si interface layer with a good (301) texture formed and induced the in-plane magnetic anisotropy in the sandwiches. The dependence of the crystalline texture of the sandwiches on the thickness of Si buffer layer was also studied.