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关于改善区熔硅单晶径向电阻率不均匀性的工艺报告,共分三篇,即:《小内径加热线圈的提出》、《加热线圈内径计算公式的原理和推导》、《加热线圈内径计算公式的应用》,报告将先后在本刊发表。 本文对一九七六年一月发表的《提高区熔硅单晶截面电阻率均匀性的工艺探讨》一文,作了必要的修改和补充。介绍了区熔法〈111〉方向N型高电阻率的硅单晶工艺中,采用了小内径加热线圈、低功率、粗腰生长工艺,改善了径问电阻率的不均匀性,并对小内径加热线圈导致径向电阻率不均匀性改善的机理,作了初步的分析。
On the improvement of radial silicon single crystal radial resistivity inhomogeneity report, is divided into three, namely: “proposed small diameter heating coil”, “heating coil diameter calculation formula and deduction,” “heating coil diameter Application of Formulas ”, the report will be published in the journal. This article made the necessary changes and additions to the article “Process Technology for Increasing the Resistivity Uniformity of the Zone Fused Silicon Single Crystal” published in January 1976. In the silicon single crystal process with zone-type <111> direction N-type high resistivity, a small inner diameter heating coil, low power and thick waist growth process are introduced to improve the inhomogeneity of the resistivity. The inner diameter of the heating coil lead to the improvement of the radial resistivity mechanism, made a preliminary analysis.