【摘 要】
:
应用一种改进的片上线性度测试方法来对上海华虹宏力半导体制造有限公司生产的SiGe HBT进行测试,得到了一个较好的测试结果,同时对其线性度随偏置情况的变化以及引起变化的机
【机 构】
:
天津大学电子信息工程学院,清华大学微电子学研究所,
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应用一种改进的片上线性度测试方法来对上海华虹宏力半导体制造有限公司生产的SiGe HBT进行测试,得到了一个较好的测试结果,同时对其线性度随偏置情况的变化以及引起变化的机制进行了分析和讨论。通过分析表明:在集电极偏置电流较小时,SiGe HBT的线性度主要受器件跨导和雪崩倍增效应的限制;在中等大小的集电极偏置电流下,SiGe HBT的非线性主要由集电结势垒电容所产生;在大的集电极偏置电流下,大电流效应是产生非线性的主要原因。
An improved on-chip linearity test method is used to test the SiGe HBT produced by Shanghai Huahong Grace Semiconductor Manufacturing Co., Ltd. The test result is good. Meanwhile, the linearity of the SiGe HBT is affected by the change of the bias condition, The mechanism of change was analyzed and discussed. The analysis shows that the linearity of SiGe HBT is limited by the transconductance and the avalanche multiplication effect of the device when the collector bias current is small. The nonlinearity of the SiGe HBT under the moderate collector bias current is mainly caused by the collector current Junction barrier capacitor generated; in the large collector bias current, the main current effect is the main reason for non-linearity.
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