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本文通过对单晶硅片抛光过程接触压力场分布的理论分析和计算就如何选择合理的抛光参数（抛光垫的弹性模量、抛光垫的厚度等）以得到高的工件平面度和表面加工质量进行了理论研究、为了简化问题和反映本质，文中将单品晶硅片抛光过程中的接触问题经过适当的假设转化为弹性力学领域内的轴对称园柱复合弹性半空间的接触问题并建立了力学模型和教学模型。
In this paper, through the theoretical analysis and calculation of the contact pressure field distribution in the process of single crystal silicon wafer polishing, how to select the reasonable polishing parameters (the elastic modulus of the polishing pad, the thickness of the polishing pad, etc.) to get high workpiece flatness and surface quality In order to simplify the problem and reflect the essence, the contact problem in the process of single-crystal wafer polishing is transformed into the contact problem of the elastic-plastic half-space in the field of elastic mechanics by the appropriate assumption and a Mechanical model and teaching model.