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本文阐述了电源电压为5伏、沟道长度为5微米的高速硅栅CMOS IC技术。分析了提高速度的途径,介绍了高速门电路和双D触发器电路型式的选择,描述了版图设计的特点.最后给出了几种电路的交直流参数。 一、前言 CMOS IC问世以来,以其静态功耗低、输入阻抗高、输出幅度大、抗干扰能力强、电源电压应用范围和工作温度宽等独特的优点,深受人们的重视,发展异常迅速。过去LSI的主流技术——NMOS因其功耗和噪声容限已达极限,而CMOS电路以其特有的低功耗、高
This article describes a high-speed Si-gate CMOS IC technology with a 5-V supply voltage and a channel length of 5 microns. The ways of increasing the speed are analyzed, the selection of the circuit type of high-speed gate and double D flip-flop is introduced, the characteristics of layout are described, and the AC / DC parameters of several circuits are given. I. INTRODUCTION Since the advent of the CMOS IC, its unique advantages such as low static power consumption, high input impedance, large output amplitude, strong anti-interference ability, wide application range of power supply voltage and wide operating temperature have attracted people’s attention and developed rapidly. . In the past LSI mainstream technology - NMOS because of its power and noise tolerance has reached its limit, and CMOS circuits with its unique low-power, high