Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate ins

• 作 者: 刘雪强 毕卫红 张彤
• 机 构: College of Information Science and Engineering,Yanshan University,State Key Laboratory of Integrated
• 出 处: 半导体学报
• 发表日期: 2010年12期
• 关键词: phthalocyanine insulator dielectric capacitance leakage copolymer methacrylate t

Low voltage organic thin film transistors(OTFTs) were created using polymethyl-methacrylate-co g-lyciclyl-methacrylate(PMMA-GMA) as the gate dielectric.The OTFTs performed acceptably at supply voltages of about 10 V.From a densely packed copolymer brush,a leakage current as low as 2×10~(-8) A/cm~2 was obtained.From the measured capacitance-insulator frequency characteristics,a dielectric constant in the range 3.9-5.0 was obtained. By controlling the thickness of the gate dielectric,the threshold voltage was reduced from -3.5 to -2.0 V.The copper phthalocyanine(CuPc) based organic thin film transistor could be operated at low voltage and 1.2×10~(-3)cm~2/(V·s) mobility.

Low voltage organic thin film transistors (OTFTs) were created using polymethyl-methacrylate-co g-lyciclyl-methacrylate (PMMA-GMA) as the gate dielectric. The OTFTs performed acceptably at the supply voltages of about 10 V. Of a densely packed copolymer brush , a leakage current as low as 2 × 10 -8 A / cm 2 was obtained. From controlling the thickness of the gate dielectric, the threshold voltage was reduced from -3.5 to -2.0 V. The copper phthalocyanine (CuPc) based organic thin film transistor could be operated at a low voltage and 1.2 × 10 ~ (-3) cm ~ 2 / (V · s ) mobility.