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采用FCVA工艺成功制备了ta-C薄膜,采用ECR-CVD工艺对部分ta-C薄膜试样进行氮等离子体处理,制备了ta-C:N薄膜。对两种薄膜的表面粗糙度与元素含量、沉积工艺参数之间的关系进行了研究。通过AFM对薄膜表面粗糙度进行了分析,通过XPS对薄膜的元素含量进行了分析。试验结果显示,沉积条件对薄膜厚度和元素含量具有明显的影响。对ta-C薄膜进行氮等离子体处理后,其表面粗糙度有一个明显的起伏变化。研究结果表明,氮能改变DLC薄膜表面的粗糙度。元素含量也随着薄膜的厚度变化而变化。
The ta-C thin films were successfully prepared by FCVA process and the ta-C: N thin films were prepared by nitrogen plasma treatment on some ta-C thin films by ECR-CVD process. The relationship between the surface roughness of the two films and the content of the elements and the deposition process parameters was studied. The surface roughness of the film was analyzed by AFM, and the elemental content of the film was analyzed by XPS. The experimental results show that the deposition conditions have a significant impact on the film thickness and elemental content. After the nitrogen plasma treatment of ta-C thin film, the surface roughness has a significant fluctuation. The results show that nitrogen can change the surface roughness of DLC films. The elemental content also varies with the thickness of the film.