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在超大规模集成电路 (U L SI)铜布线工艺中 ,采用阻挡层来提高铜与衬底的粘附性 ,主要是为了防止铜原子向介质或衬底中扩散 .为了达到全局平面化 ,就需要克服阻挡层金属与布线金属铜因化学和物理性质的不同而导致其化学机械抛光 (CMP)速率的不同 .通过研究和一系列试验 ,采用两步抛光 ,初抛中采用高化学作用 ,终抛中采用高机械作用 ,达到较好的全局平面化效果 ,并提出了初抛的 CMP模型 .
In the ultra-large scale integrated circuit (UL SI) copper wiring process, the barrier layer is used to improve the adhesion of copper to the substrate, mainly to prevent copper atoms from diffusing into the medium or substrate. In order to achieve global planarization, it is necessary Overcoming the differences in chemical mechanical polishing (CMP) rates due to the different chemical and physical properties of the barrier metal and the wiring copper metal, the two-step polishing process was used in the study and a series of experiments. The high chemical effect and the final polishing In the use of high mechanical effect, to achieve better overall effect of the plane, and proposed the first throw of the CMP model.