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介绍了自行设计制造的φ50～76mm GaAs气相外延系统特点,多层GaAs外延生长技术,微机控制程序,分析了外延材料的均匀性;报道了此类材料在多种GaAs MESFET和GaAs IC研制方面的应用结果。
The characteristics of φ50 ~ 76mm GaAs vapor phase epitaxy system designed by ourselves, multi-layer GaAs epitaxial growth technology and microcomputer control program are introduced, and the uniformity of epitaxial material is analyzed. It is reported that this kind of material has been used in many GaAs MESFETs and GaAs ICs Application results.