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In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P+region, but also overcomes the shadow effect.With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95%of strips meet application requirements.
In the fabrication of a 48 mm × 48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect PN junction can not be formed by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P + region, but also overcomes the shadow effect .With the help of the stratified implantation process, a perfect functional PN junction can be formed, and over 95% of strips meet application requirements.