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介绍了新型光控晶闸管,其集成了一个非常重要的电气功能,即正向过压保护功能。通过在光控晶闸管光敏区内集成转折二极管(BOD),实现光控晶闸管正向保护功能。如果集成BOD转折电压太高,不能有效保护晶闸管;若转折电压太低,则达不到光控晶闸管设计的阻断电压要求。通过计算机仿真技术和工艺实验方法,成功地揭示了光控晶闸管集成BOD转折电压与硅材料电阻率、pn结结构尺寸和温度的关系,从而精确设计了光控晶闸管集成BOD转折电压,研制了5英寸(1英寸=2.54 cm)3 125 A/7 600 V特高压光控晶闸管,并成功应用于“云南-广东±800 kV/5 000 MW”特高压直流输电工程中。
Introduced a new type of light-emitting thyristor, which integrates a very important electrical function, that is, forward voltage protection. Light-controlled thyristor forward protection is achieved by integrating a turn-on diode (BOD) in the light-sensitive thyristor’s photosensitive area. If the integrated BOD transition voltage is too high, can not effectively protect the thyristor; if the transition voltage is too low, then the light-blocking thyristor design voltage does not meet the requirements. Through the computer simulation technology and the process experiment method, the integrated BOD turning voltage of the light-induced thyristor has been successfully disclosed, and the relationship between the resistivity of the silicon material and the structure size and the temperature of the pn junction has been revealed. Inch (1 inch = 2.54 cm) 3 125 A / 7 600 V UHV light-emitting thyristor and has been successfully used in the “Yunnan-Guangdong ± 800 kV / 5 000 MW” UHVDC project.