Micro-Mechanism of Silicon-Based Waveguide Surface Smoothing in Hydrogen Annealing

• 作 者: 段倩倩 任馨宇 菅傲群 张辉 冀健龙 张强 张文栋 桑胜波
• 机 构: Micro Nano System Research Center,College of Information Engineering,Taiyuan University of Technolog
• 出 处: Chinese Physics Letters
• 发表日期: 2016年12期
• 关键词: waveguide annealing migration roughness systematically bonding smoothing validat

The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides.The effect of siliconhydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed.The micro-migration from an upper state to a lower state of silicon atoms is driven by siliconhydrogen bonding,which is the key to ameliorate the rough surface morphology of the silicon-based waveguide.The process of hydrogen annealing is experimentally validated based on the simulated parameters.The surface roughness declines from 1.523 nm to 0.461 nm.

The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of siliconhydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by siliconhydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523 nm to 0.461 nm.