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本文对场感应晶体管的Ⅰ—Ⅴ特性进行了简单讨论后,给出了试验中所遇到的若干异常的Ⅰ—Ⅴ特性曲线.并分析了它所对应的有关电参数的劣化以及可能的物理工艺原因.
After a brief discussion of the Ⅰ-Ⅴ characteristics of the field-sensing transistor, this paper presents several abnormal Ⅰ-Ⅴ characteristic curves encountered in the experiment, and analyzes the corresponding deterioration of the related electrical parameters and possible physical Process reasons.