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在前人优秀工作的基础上，叙述了一个适用于低温和多种基区Ｇｅ组分分布的ＳｉＧｅ－ＨＢＴ电流增益的解析模型，详细推出了它的模型公式。该模型考虑了基区处于非平衡态下的载流子准弹道输运效应对集电极电流Ｊｃ和电流增益β的影响，并考虑了ＳｉＧｅ材料迁移率及本征载流子浓度随温度的变化。解析模型的计算结果与数值模拟结果符合较好，证明了解析模型是可信的和有一定精度的。模型计算结果表明：均匀Ｇｅ分布、较低的发射区掺杂浓度和较宽的基区有利于ＳｉＧｅＨＢＴ在低温下具有较大的电流增益。
Based on the excellent work of predecessors, an analytical model of SiGe-HBT current gain, which is suitable for the distribution of Ge components at low temperature and various base areas, is described. Its model formula is introduced in detail. The model considers the effect of quasi-ballistic transport of carriers on the collector current Jc and current gain β in a non-equilibrium state of the base region, and takes into account the change of SiGe material mobility and intrinsic carrier concentration with temperature . The calculated results of the analytical model are in good agreement with the numerical simulation results, which proves that the analytical model is credible and has certain accuracy. The results show that the uniform Ge distribution, lower emitter doping concentration and wider base region are favorable for SiGeHBT to have larger current gain at low temperature.