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相变材料(Phase-Change Materials,PCMs)可以通过施加热脉冲等方式实现晶态与非晶态之间的快速、可逆转换,因而得到了大量的研究和关注.本文以最常用的相变材料体系Ge-Sb-Te(GST)中的二元化合物Sb_2Te_3为研究对象,通过范德瓦尔斯外延在云母衬底上实现了取向一致、厚度可控的Sb_2Te_3单晶薄片的制备,薄片厚度最薄可达1~2nm,横向尺寸可达10μm左右.通过TEM、XPS及拉曼光谱对薄片的结构和成分做了系统的表征;通过施加电流脉冲实现了其晶态到非晶态的相变,并在非晶化薄片上观测到PC-RAM器件典型的I-V曲线阈值电压效应.这种在云母衬底上实现大尺寸的Sb_2Te_3单晶薄片生长的方法为研究相变材料的维度和限域效应提供了一个新的途径.
Phase-Change Materials (PCMs), which can achieve rapid and reversible conversion between crystalline and amorphous states by applying thermal pulse, have drawn a great deal of researches and concerns.In this paper, the most commonly used phase change materials The binary Sb 2 Te 3 in the system Ge-Sb-Te (GST) was used as the research object to fabricate the Sb 2 Te 3 single crystal wafer with uniform orientation and controlled thickness by van der Waals epitaxy on the mica substrate. Up to 1 ~ 2nm and lateral size up to 10μm.The structure and composition of the thin films were systematically characterized by TEM, XPS and Raman spectroscopy.The phase transition from crystalline to amorphous state was achieved by applying current pulse, And the typical IV curve threshold voltage effect of PC-RAM devices was observed on the amorphous wafer.This method to realize the growth of large-size Sb 2 Te 3 single crystal wafer on mica substrate is to study the dimensionality and confinement effect of phase-change material Provide a new way.