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NEC公司（位于日本东京）所开发成功的单芯片氮化物半导体功率晶体管试验样品,创造了新记录,首次突破了100W的输出功率。这项成果,是为了适应移动通信的要求而开发的。移动通信产业的基站,需要更小体积、更高输出功率的放大器。 目前的基站采用的是砷化镓芯片,是用4个芯片安装在同一个封装内,总的输出功率可以达到240到300W。如果进一步增加组合芯片的数量,不但使封装的尺寸增大,也不可避免地增加了功率损耗,同时也加大了偏置电流。这些限制使得输出功率很难超过300W,甚至是根本不可能。
NEC Corporation (located in Tokyo, Japan) has developed a successful single-chip nitride semiconductor power transistor test samples, creating a new record for the first time exceeded the output power of 100W. This result was developed to meet the requirements of mobile communications. Base stations for the mobile communications industry require amplifiers of smaller size and higher output power. The current base station uses a gallium arsenide chip, is a 4-chip chip installed in the same package, the total output power can reach 240 to 300W. If you further increase the number of combination of chips, not only the package size increases, but also inevitably increase the power loss, but also increased the bias current. These restrictions make the output power is difficult to exceed 300W, or even impossible.