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利用灯丝热解CVD方法以甲烷和氢气为原料、以单质硼为掺杂源,制备了高晶体品质的硼掺杂多晶金刚石薄膜。其晶体结构及晶格常数与天然立方结构金刚石相同,硼掺杂后未引起金刚石薄膜中非金刚石碳含量的增加。证实了硼掺杂金刚石薄膜为p-型半导体材料,其最大硼掺杂浓度接近10~(20)cm~(-3),最大室温空穴载流子浓度达到10~(18)cm~(-3)。由硼掺杂金刚石薄膜红外吸收数据及类氢模型的估算证实了硼在金刚石的禁带中引入了位于价带以上约0.35eV的受主能级。
The high-quality boron doped polycrystalline diamond films were prepared by filament pyrolysis CVD using methane and hydrogen as raw materials and elemental boron as doping source. Its crystal structure and lattice constant are the same as that of natural cubic structural diamond, and boron doping does not cause an increase of non-diamond carbon content in the diamond film. It is confirmed that the boron-doped diamond films are p-type semiconductor materials, the maximum boron doping concentration is close to 10 ~ (20) cm ~ (-3) and the maximum room temperature hole carrier concentration is 10 ~ (18) cm ~ -3). An estimation of the infrared absorption data and the hydrogen-like model of the boron-doped diamond film confirmed that boron introduced an acceptor level of about 0.35 eV above the valence band in the forbidden band of the diamond.