The effect of γ-ray irradiation on the SOT magnetic films and Hall devices

• 作 者: Tengzhi Yang Yan Cui Yanru Li Meiyin Yang Jing Xu Huiming He Shiyu Wang Jing Zhang Jun Luo
• 机 构: Key Laboratory of Microelectronic Devices & Integrated Technology,Institute of Microelectronics,Chin
• 出 处: 半导体学报（英文版）
• 发表日期: 2021年2期
• 关键词: SOT-MRAM y-ray irradiation TID effect anomalous Hall effect

Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their po-tential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on endurance and access speed,which is considered to be one of the candidates to replace SRAM for space application.However,little atten-tion has been given to the γ-ray irradiation effect on the SOT-MRAM device yet.Here,we report the Co-60 irradiation results for both SOT(spin-orbit torque)magnetic films and SOT-Hall devices with the same stacks.The properties of magnetic films are not affected by radiation even with an accumulated dose up to 300 krad(Si)while the magnetoelectronic properties of SOT-Hall devices exhibit a reversible change behavior during the radiation.We propose a non-equilibrium anomalous Hall effect mod-el to understand the phenomenon.Achieved results and proposed analysis in this work can be used for the material and struc-ture design of memory cell in radiation-hardened SOT-MRAM.