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针对硬盘NiP/Al基板粗抛光,采用SiO2作为抛光磨料的碱性抛光液,在不同压力、转速、pH值、磨料浓度和活性剂体积浓度下,对硬盘基板粗抛光的去除速率和表面粗糙度的变化规律进行研究,用原子力显微镜观察抛光表面的微观形貌。最后对5个关键参数进行了优化。结果表明:当压力为0.10 MPa,转速为80 rad/min,pH值为11.2,磨料与去离子水体积比为1∶0.5,表面活性剂体积浓度为9 mL/L时,硬盘基板的去除速率为27 mg/min,粗抛后表面粗糙度为0.281 nm,获得了高的去除速率和较好的表面粗糙度,这样会大大降低精抛的时间,有利于抛光效率的提高。
According to the rough polishing of hard disk NiP / Al substrate, SiO2 is used as alkaline polishing solution for polishing abrasive, and the removal rate and surface roughness of rough polishing of hard disk substrate under different pressure, rotation speed, pH value, abrasive concentration and active agent volume concentration The change rule of the polished surface was observed by atomic force microscopy. Finally, five key parameters were optimized. The results show that when the pressure is 0.10 MPa, the rotating speed is 80 rad / min, the pH value is 11.2, the volume ratio of abrasive to deionized water is 1: 0.5 and the volume concentration of surfactant is 9 mL / L, the removal rate of hard disk substrate Of 27 mg / min. After rough polishing, the surface roughness was 0.281 nm. High removal rate and good surface roughness were obtained, which greatly reduced the polishing time and improved the polishing efficiency.