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采用磁控溅射方法制备Ｍｏ／Ｓｉ多层膜．通过小角Ｘ射线散射图证明该多层膜是原子水平的，界面清晰，与设计周期基本相同．通过Ｘ射线衍射方法检测了该多层膜的组成和结构，同时对Ｍｏ／Ｓｉ多层膜的位错密度等参数进行定量研究．结果表明，该超晶格的位错密度随周期厚度的减小而增大，晶粒尺寸随周期厚度的减小而减小
Preparation of Mo / Si multilayers by magnetron sputtering. The small-angle X-ray scattering pattern proves that the multi-layer film is atom-level, the interface is clear, and the design cycle is basically the same. The composition and structure of the multilayer films were examined by X-ray diffraction. The dislocation density and other parameters of Mo / Si multilayers were quantitatively studied. The results show that the dislocation density of the superlattice increases with the decrease of the periodic thickness, and the grain size decreases with the decrease of the periodic thickness