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对GaAs基AlGaInP系半导体发光二极管(light emitting diode,LED)提取效率低导致器件发热而寿命缩短等问题进行了分析,提出了一种新型表面结构的LED,在与普通LED相同的外延生长条件下,通过后工艺引入了表面图形并腐蚀出凹凸不平的表面以改变光子传输方向,同时制备了导电光增透层,既增强了电流的扩展同时使得更多的光子能够发射到体外,在相同的注入电流下,新型表面增透结构LED的轴向光强平均是普通LED的1.5倍,由于光提取效率高,更多的光子能够发射到体外,发热减少,饱和电流更高,达到125mA,加速老化寿命测试显示:裸芯寿命为19×104h,封装后寿命为13×104h,器件适合于大电流下工作.
The problems of low efficiency of light emitting diode (GaAs) -based AlGaInP semiconductor light-emitting diode (LED), which leads to the device’s heating and shortened lifetime, are proposed. A novel LED with surface structure is proposed. Under the same epitaxial growth conditions as the conventional LED , The surface pattern is introduced through the post process and the uneven surface is etched to change the direction of the photon transmission. At the same time, the conductive antireflection layer is prepared, which not only enhances the current expansion but also enables more photons to be emitted to the outside. In the same Injecting current, the new surface-enhanced LED axial intensity average of 1.5 times the average LED, due to high light extraction efficiency, more photons can be emitted to the body, reducing heat, saturation current higher, reaching 125mA, acceleration Aging life test shows: die life of 19 × 104h, package life of 13 × 104h, the device is suitable for large current work.