【摘 要】
：
The kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have yielded a prospective conversion efficiency among all thin-film photovoltaic technology. However, its fur
【机 构】
：
The Key Laboratory for Special Functional Materials of MOE, Collaborative Innovation Center of Nano
论文部分内容阅读
The kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have yielded a prospective conversion efficiency among all thin-film photovoltaic technology. However, its further development is still hindered by the lower open-circuit voltage (Voc), and the non-ideal bandgap of the absorber is an important factor affecting this issue. The substitution of Sn with Ge provides a unique ability to engineer the bandgap of the absorber film. Herein, a simple precursor solution approach was successfully developed to fabricate Cu2Zn(SnyGe1?y)(SxSe1?x)4 (CZTGSSe) solar cells. By precisely adjusting the Ge content in a small range, the Voc and Jsc are enhanced simultaneously. Benefitting from the optimized bandgap and the maintained spike structure and light absorption, the 10％Ge/(Ge+Sn) content device with a bandgap of approximately 1.1 eV yields the highest efficiency of 9.36％. This further indicates that a precisely controlled Ge content could further improve the cell performance for efficient CZTGSSe solar cells.
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