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提出一种改进4管自体偏压结构SRAM/SOI单元.基于TSUPREM4和MEDICI软件的模拟和结构性能的分析,设计单元结构并选取结构参数.该结构采用nMOS栅下的含p+埋沟的衬底体电阻代替传统6管CMOSSRAM单元中的pMOS元件,具有面积小、工艺简单的优点.该结构可以在0.5V的电源电压下正常工作,与6管单元相比,该单元瞬态响应正常,功耗只有6管单元的1/10,满足低压低功耗的要求.
An improved 4-cell SRAM / SOI cell with self-biasing structure was proposed.Based on the simulation and structural performance analysis of TSUPREM4 and MEDICI software, the cell structure was designed and the structure parameters were selected.The structure consisted of substrate with p + buried under nMOS gate The body resistance replaces the pMOS component in the conventional 6-transistor CMOSSRAM cell, which has the advantages of small area and simple process, and can work normally under the supply voltage of 0.5V. Compared with the 6-cell transistor, the cell has a normal transient response, Consumption of only 6 units of 1/10, to meet the requirements of low-voltage low-power.