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本文采用渐变沟道近似和准二维分析的方法,通过求解泊松方程,建立了应变Si NMOSFET阈值电压集约物理模型.模型同时研究了短沟道,窄沟道,非均匀掺杂,漏致势垒降低等物理效应对阈值电压的影响.采用参数提取软件提取了阈值电压相关参数,通过将模型的计算结果和实验结果进行对比分析,验证了本文提出的模型的正确性.该模型为应变Si超大规模集成电路的分析和设计提供了重要的参考.
In this paper, by adopting the method of gradient channel approximation and quasi-two-dimensional analysis, the Poisson equation is solved to establish the threshold voltage intensive physical model of strained Si NMOSFET. The model is also studied for short channel, narrow channel, heterogeneous doping, The influence of the physical effects such as the decrease of the potential barrier on the threshold voltage is obtained.The parameters of the threshold voltage are extracted by the parameter extraction software and the correctness of the model proposed in this paper is verified by comparing the calculation results with the experimental results.The model is strain Si VLSI analysis and design provides an important reference.