MEMS magnetic field sensor based on silicon bridge structure

• 作 者: 杜广涛 陈向东 林其斌 李辉 郭辉辉
• 机 构: School of Information Science and Technology,Southwest Jiaotong University,
• 出 处: 半导体学报
• 发表日期: 2010年10期
• 关键词: diaphragm magnet ferromagnetic producing bases boron hysteresis Figure adhesive

A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested.The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge,and a ferromagnetic magnet adhered to the sensitivity diaphragm.When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm,producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor.Good agreement is observed between the theory and measurement behavior of the magnetic field sensor.Experimental results demonstrate that the maximum sensitivity and minimum resolution are 48 mV/T and 160μT,respectively,making this device suitable for strong magnetic field measurement.Research results indicate that the sensor repeatability and dynamic response time are about 0.66%and 150 ms,respectively.

A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested. The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge, and a ferromagnetic magnet adhered to the sensitivity diaphragm. external magnetic field, the magnetic force bends the silicon sensitivity diaphragm, producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor. Good agreement is observed between the theory and measurement behavior of the magnetic field sensor. the maximum sensitivity and minimum resolution are 48 mV / T and 160 μT, respectively, making this device suitable for strong magnetic field measurement. Research results indicate that the sensor repeatability and dynamic response times are about 0.66% and 150 ms, respectively.