论文部分内容阅读
研究了掺镁钛酸锶（SrTiO3）厚膜氧传感器的敏感机理，镁在SrTiO3的含量分别取10％、20％、30％、40％和50％（摩尔分数）。实验结果表明，当温度在400～900℃之间、氧分压在38Pa～2．6×104Pa之间时，所有的样品均为空穴导电型（P型）半导体；镁含量为40％（摩尔分数）的SrTiO3厚膜样品显示出最好的氧敏性能，在温度为500～800℃时，它对氧分压变化的灵敏度为7～8．5，响应时间和恢复时间分别为28～325。本文从缺陷化学的角度解释了所得到的实验结果，尤其是logR∝－l／3logPo2的依赖关系。
The sensitive mechanism of strontium titanate (SrTiO3) thick film oxygen sensor was studied. The contents of magnesium in SrTiO3 were 10%, 20%, 30%, 40% and 50% respectively. The experimental results show that when the partial pressure of oxygen is between 38Pa and 2.6 × 104Pa, the samples all have hole-conduction type (P-type) semiconductors at temperatures between 400 and 900 ℃. The content of magnesium is 40% The SrTiO3 thick film samples showed the best oxygen sensitivity at the temperature of 500-800 ℃, the sensitivity to the partial pressure of oxygen was 7-8.5, the response time and the recovery time were 28 ~ 325. This article explains the experimental results obtained from the viewpoint of defect chemistry, especially the dependence of logRα-1 / 3logPo2.