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本文用表面光伏法(SPV)测定了在(100)晶向 InP 衬底上液相外延生长的晶格匹配的In_(0.53)Ga_(0.47)As 外延层中的少子扩散长度。已测得的典型结果为:N_D=5×10~(15)cm~(-3),L_P=2μm;N_D=1.2×10~(18)cm~(-3),L_P=0.85μm。此外,还给出了不同浓度(N_D)的 n-InGaAs 中少子扩散长度的变化情况。发现当 N_D 增大时,L_P 随之下降,并且 L_P 下降幅度在高浓度范围内明显加剧。研究结果表明,对于三元合金 n-In_(0.53)Ga_(0.47)As 材料,只要满足一定测试条件,并对样品表面进行必要处理,用 SPV 法测量扩散长度是可行的。
In this paper, the minority carrier diffusion length of the lattice matched In 0.53 Ga 0.47 As As epitaxial layer grown by liquid phase epitaxy on the (100) to InP substrate was measured by surface photovoltaics (SPV). The typical results have been measured: N_D = 5 × 10 ~ (15) cm ~ (-3), L_P = 2μm; N_D = 1.2 × 10 ~ (18) cm -3, L_P = 0.85μm. In addition, the variation of minority-diffusion length in n-InGaAs with different concentration (N_D) is also given. It is found that when N_D increases, L_P decreases, and L_P decreases sharply in the high concentration range. The results show that for the ternary alloy n-In 0.53 Ga 0.47 As, it is feasible to measure the diffusion length by the SPV method as long as certain test conditions are met and the surface of the sample is treated as necessary.