Optimal migration route of Cu in HfO_2

• 作 者: 卢金龙 罗京 赵宏鹏 杨金 蒋先伟 刘琦 李晓风 代月花
• 机 构: Institute of Electronic and Information Engineering, Anhui University,Laboratory of Nano-Fabrication
• 出 处: Journal of Semiconductors
• 发表日期: 2014年01期
• 关键词: migration resistive favorable faster relaxation coordinates barriers transportat

The movement of Cu in a HfO2-based resistive random access memory(RRAM) device is investigated in depth by first-principle calculations. Thermodynamics analysis shows that the dominant motion of Cu tends to be along the [001] orientation with a faster speed. The migration barriers along different routes are compared and reveal that the [001] orientation is the optimal migration route of Cu in HfO2, which is more favorable for Cu transportation. Furthermore, the preferable HfO2growth orientation along [100], corresponding to Cu migration along [001], is also observed. Therefore, it is proposed that the HfO2material should grow along [100] and the operating voltage should be applied along [001], which will contribute to the improvement of the response speed and the reduction of power consumption of RRAM.

The movement of Cu in a HfO2-based resistive random access memory (RRAM) device is investigated in depth by first-principle calculations. Thermodynamics analysis shows that the dominant motion of Cu tends to be along the [001] orientation with a faster speed. The migration barriers along different routes are compared and reveal that the [001] orientation is the optimal migration route of Cu in HfO2, which is more favorable for Cu transportation. Furthermore, the preferred HfO2growth orientation along [100], corresponding to Cu migration along [001], is also observed. Therefore, it is proposed that the HfO2 material should grow along [001], which will contribute to the improvement of the response speed and the reduction of power consumption of RRAM.