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研究了 Zn S1 - x Tex(0 .0 2≤ x≤ 0 .3)混晶的静压光致发光谱 .每块样品都观察到一个峰值比相应混晶带隙低很多的发光峰 ,来源于束缚在 Ten(n≥ 2 )等电子陷阱上的激子复合发光 ,且随压力 (0～ 7.0 GPa)而蓝移 .发光峰的压力系数比相应混晶带边的都要小 ,随着 Te组分的增加而减小 ,与混晶带隙压力系数的差别也越来越大 .由于压力下与发光峰对应的吸收能量逐渐接近并超过激发光的能量 ,与发光峰有关的吸收效率降低 ,发光峰积分强度随着压力增加而减小 .据此估算了 Ten 等电子中心的 Stokes位移 .发现 Stokes位移随着 Te组分的增加而减小
The static pressure photoluminescence (PL) spectra of ZnS1-xTex (0. 2≤x≤0. 3) mixed crystals were investigated. Each sample showed a luminescence peak with much lower peak than that of the corresponding mixed- The excitons recombine luminescence bound to electron traps such as Ten (n≥2) and blue-shifted with the pressure (0 ~ 7.0 GPa) .The pressure coefficient of the luminescence peak is smaller than that of the corresponding mixed crystal edge Te composition increases with decreasing, and mixed crystal bandgap pressure coefficient is also more and more difference.Because the pressure and luminescence peak corresponding to the absorption energy gradually close to and beyond the energy of the excitation light, and the peak absorption-related absorption efficiency Decreases, and the intensities of the luminescence peaks decrease with the increase of the pressure. Based on this, the Stokes displacements of the electron centers such as Ten are estimated, and the Stokes displacements are found to decrease as the Te component increases