Effects of high temperature annealing and laser irradiation on activation rate of phosphorus

• 作 者: Shaojie Li Peide Han
• 机 构: InstituteofSemiconductors,UniversityofChineseAcademyofSciences
• 出 处: 半导体学报:英文版
• 发表日期: 2020年12期
• 关键词: thermal annealing ion implantation femtosecond laser activation rate
• 基金项目: This work was supported by National Key R&D Program of China(No.2018YFB1500500),We thank Yingli Company and TEDA Institute of Applied Physics of Nankai University for their help in this research.

Thermal annealing and laser irradiation were used to study the activation rate of phosphorus in silicon after ion implantation.The activation rate refers to the ratio of activated impurity number to the total impurity number in the sample.After injecting