论文部分内容阅读
为了增加InP层的肖特基势垒高度,选择了一种宽带隙应变GaInP材料,首次采用这种材料在InP上制作了高电子迁移率晶体管(图1)。这些1.3μm栅长的HEMT器件最好的g_m可达300mS/mm。在低温(100～293K)条件下对栅长为3μm的晶体管进行了研究,它们直流特性的改善依赖于冷却程度。在最低温度下测到了最好的改进结果(105K下g_m增加54％)。与AlGaAs/GaAs异质结构不同,这种材料的结构是稳定的,而且在低温下没有出现任何g_m或I_(ds)的减小。
In order to increase the Schottky barrier height of the InP layer, a wide bandgap strain GaInP material was chosen. For the first time, this material was used to fabricate a high electron mobility transistor on InP (Fig. 1). The best gm for these 1.3μm HEMT devices is 300mS / mm. Transistors with a gate length of 3 μm were studied at low temperature (100 to 293 K) and their DC characteristics improved depending on the degree of cooling. The best improvement was measured at the lowest temperature (54% increase in g_m at 105K). Unlike AlGaAs / GaAs heterostructures, the structure of this material is stable and does not show any reduction in g_m or I_ (ds) at low temperatures.