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ｐ／ｉ和ｉ／ｎ界面对ａＳｉＧｅ单结电池的性能影响较大，提高电池性能的关键是减小界面复合。选择适当的工艺条件，获得了效率为２０１％的ａＳｉＧｅ单结电池。
p / i and i / n interface on a SiGe single junction cell performance greater impact to improve battery performance is the key to reducing interface recombination. Select the appropriate process conditions, the efficiency was 2 01% a SiGe single junction cells.