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采用射频磁控溅射法在氮化硅衬底上沉积纳米VOx薄膜,利用X射线衍射、原子力显微镜分别对薄膜的结晶形态及表面形貌进行表征.研究了纳米VOx薄膜在空气中长时间暴露后的方块电阻、热滞回线等电学特性的变化情况,并分析这些变化给器件带来的影响.利用X射线光电子能谱仪、傅里叶变换红外光谱仪分析对比新制与久置薄膜的组分及分子结构差异.研究表明,暴露在空气中的纳米VOx薄膜方块电阻增大是因为低价钒离子被吸附氧原子氧化成5价钒的缘故,热滞回线形状发生变化的原因是由于薄膜原子与吸附原子、官能团成键后影响了纳米VOx薄膜的分子结构.
Nano-VOx thin films were deposited on silicon nitride substrates by radio-frequency magnetron sputtering, and the crystal morphology and surface morphology of the films were characterized by X-ray diffraction and atomic force microscopy respectively.The effect of prolonged exposure of the VOx films in the air After the block resistance, thermal hysteresis loop and other electrical characteristics of the changes, and analysis of these changes to the device the impact of the use of X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy analysis of new and long set of thin film group The results show that the sheet resistance of the nano-VOx film exposed to air increases because the vanadium ions are oxidized by the adsorbed oxygen atoms to pentavalent vanadium, and the reason why the shape of the thermal hysteresis loop is changed is that Film atoms and adsorbed atoms, functional groups after bonding has affected the molecular structure of the nano-VOx film.