论文部分内容阅读
霍尔推力器放电室壁面经受低能量(不大于300e V)离子的溅射是影响其寿命的关键因素之一。为了获得放电室壁面材料(BNSi O2)的溅射产额随离子入射角度和能量的变化规律,采用真实霍尔推力器提供275e V的氙离子在真空舱内轰击靶材,利用称重法获得实验参数下的溅射产额。为了克服单纯依靠实验测量耗时耗钱且更低能量的离子溅射实验测量误差会陡然增大的缺点,采用前面实验结果修正了基于蒙特卡罗(MC)方法的SRIM软件溅射产额计算参数,并采用文献实验结果对不同能量下的模拟结果进行验证。在此基础上,用SRIM软件较为详细地考察了入射离子能量低于300e V时入射角度和能量对霍尔推力器放电室壁面材料溅射产额的影响规律。结果表明,溅射产额随离子入射角度先增大后减小,而随入射离子能量则呈现增大的趋势,但当能量小于100e V时,溅射产额逐渐趋于一个非常小的数值。
Hall thruster discharge chamber walls subjected to low energy (no more than 300eV) ion sputtering is one of the key factors affecting their life. In order to obtain the variation of sputtering output of BNSi O2 with ion incident angle and energy, a true Hall thruster was used to bombard the target with xenon ions at 275eV in a vacuum chamber and obtain by weighing Sputtering yield under experimental parameters. In order to overcome the shortcomings of the measurement error of ion sputtering which is time-consuming and low-cost and low-energy, which is simply relying on experiments, the calculation of the sputtering yield of SRIM software based on Monte Carlo (MC) method is modified by the previous experimental results Parameters, and using the literature experimental results to verify the simulation results under different energy. On this basis, SRIM software was used to investigate in more detail the effect of incident angle and energy on the sputtering output of Hall thruster discharge wall when the incident ion energy is less than 300eV. The results show that the sputtering yield first increases and then decreases with the angle of incidence, but increases with incident ion energy. However, when the energy is less than 100eV, the sputtering yield tends to a very small value .