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横向超结双扩散MOS(SJ-LDMOS)的性能优越,在高压集成电路和功率集成电路中具有广阔的应用前景,而衬底辅助耗尽效应是制约横向超结功率器件性能的重要因素之一。分析了SJ-LDMOS衬底辅助耗尽效应的产生机理,总结了当前国内外消除SJ-LDMOS衬底辅助耗尽效应的技术,比较了各种技术的比导通电阻与击穿电压的关系。最后,从设计技术、工艺及理论模型三个方面,对横向超结器件的发展方向进行了展望。
The performance of SJ-LDMOS is superior and it has broad application prospects in high-voltage integrated circuits and power integrated circuits. The substrate-assisted depletion effect is one of the important factors that restrict the performance of lateral superjunction power devices . The generation mechanism of SJ-LDMOS substrate auxiliary depletion effect is analyzed. The current technology of eliminating the auxiliary depletion effect of SJ-LDMOS substrate is summarized. The relationship between on-resistance and breakdown voltage of various technologies is compared. Finally, the development direction of transverse superjunction devices is prospected from the aspects of design techniques, process and theoretical models.