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基于二元碰撞的物理模型，蒙特卡罗计算法被用来模拟具有数千电子伏特能量的离子在固体中的散射过程。该种方法首先被用来计算入射离子的穿透深度，并通过与离子注入的实验结果相比较来检验该种方法的有效性。然后，把这种计算法扩展到模拟撞击级联过程，发现，离子轰击引起那种在通常使用离子溅射方法进行深度分析中所说的渗入效应。而且，看来可能很小的初始深层剖面随着溅射的进行不但扩展了，而且更加深入靶的内部。 本文简略叙述目前探索溅射二元合金靶的进展。
Based on the physical model of a binary collision, the Monte Carlo method is used to simulate the scattering of ions in solids with energies of thousands of electron volts. This method was first used to calculate the penetration depth of incident ions and to verify the validity of this method by comparing with the experimental results of ion implantation. This computational method was then extended to simulate the impact cascade process and found that ion bombardment caused the seepage effect described in depth analysis, which is usually done using ion sputtering methods. Moreover, the seemingly small initial deep profile may not only expand as the sputtering progresses, but also deeper into the interior of the target. This article briefly describes the current progress in the exploration of binary target sputtering.