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硅-二氧化硅界面过渡区的状态与半导体器件制造工艺有密切关系。以不同的光电子发射角对不同的阳极氧化样品得到的XPS(X-ray Photoelectron Spectroscopy)谱表明;阳极氧化生成的氧化层接近双层突变结构,而热氧化生长层的界面存在过渡层。本文讨论了阳极氧化生长过程,分析了两种氧化方法引起过渡区差别的原因.
The state of the silicon-silicon dioxide interface transition zone is closely related to the semiconductor device manufacturing process. XPS (X-ray photoelectron spectroscopy) spectra obtained from different anodized samples at different photoelectron emission angles show that the oxide layer formed by anodization approaches the double-layer abrupt structure, while the transition layer exists at the interface of the thermally-oxidized growth layer. This article discusses the anodization growth process and analyzes the reasons for the differences in the transition zones caused by the two oxidation methods.