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目的研究衬底温度与GaN形貌及其性能之间的关系. 方法用氢化物化学气相沉积方法,在不同类型的衬底,Si(111),Si(100),GaAs,GaP(111)的P和Ga面上气相生长GaN薄膜材料,生长是在低于700℃的温度下进行的.用XRD,霍尔测量,阴极荧光及原子力显微镜表征薄膜的性质. 结果发现温度和衬底类型影响生长层的形貌. 结论分析结果显示在光学性质和生长层形貌之间没有明显的关系.“,”Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement, cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the film properties. Results It was found that the temperature and the nature of substrate materials influence the layer morphology. Conclusion The analysis shows that no apparent relationship exists between the optical properties and layer morphology.