Preparation of Nano-Crystalline Diamond Films on Poly-Crystalline Diamond Thick Films by Microwave P

• 作 者: 熊礼威 汪建华 满卫东 翁俊 刘长林
• 机 构: Institute of Plasma Physics,Chinese Academy of Sciences,Key Laboratory of Plasma Chemistry and Advan
• 出 处: Plasma Science and Technology
• 发表日期: 2010年03期
• 关键词: Diamond diamond crystalline interlayer microwave thick tungsten feasible boron f

Nano-crystalline diamond (NCD) films were prepared on poly-crystalline diamond(PCD) thick films by the microwave plasma enhanced chemical vapor deposition (MPCVD)method. Free standing PCD thick film (50 mm in diameter) with a thickness of 413 μm wasdeposited in CH_4/H_2 plasma. It was then abraded for 2 hours and finally cut into pieces in asize of 10×10 mm~2 by pulse laser. NCD films were deposited on the thick film substrates byintroducing a micro-crystalline diamond (MCD) interlayer. Results showed that a higher carbonconcentration (5%) and a lower substrate temperature (650℃) were feasible to obtain a highlysmooth interlayer, and the appropriate addition of oxygen (2%) into the gas mixture was conduciveto obtaining a smooth nano-crystalline diamond film with a tiny grain size.

Nano-crystalline diamond (NCD) films were prepared on poly-crystalline diamond (PCD) thick films by the microwave plasma enhanced chemical vapor deposition (MPCVD) method. was was deposited in CH_4 / H_2 plasma. It was then abraded for 2 hours and finally cut into pieces in as of 10 × 10 mm ~ 2 by pulse laser. NCD films were deposited on the thick film substrates by incing a micro-crystalline diamond (MCD) interlayer. Results showed that a higher carbon concentration (5%) and a lower substrate temperature (650 ° C) were feasible to obtain a highlysmooth interlayer, and the appropriate addition of oxygen (2%) into the gas mixture was conducive to obtaining a smooth nano- crystalline diamond film with a tiny grain size.