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结合量子力学模型、偶极子转换理论和金属氧化物半导体结构的半导体物理理论,对描述金属层-绝缘层-铁电层-绝缘层-半导体(MIFIS)结构电学性能的模型进行了改进。该模型考虑了半导体表面的界面捕获态,利用该模型,研究了界面捕获态对半导体表面势-电压(φSi-V)特性和MIFIS结构低频电容-电压(C-V)特性及记忆窗口的影响。结果显示,随着界面捕获态密度的增加,φSi-V和C-V特性曲线沿电压正方向移动并发生变形,记忆窗口逐渐减小,即界面捕获态密度越大,MIFIS结构的电学性能越差。该研究在MIFIS结构器件的设计和制作方面具有指导意义。
The model describing the electrical properties of metal-insulator-ferroelectric layer-insulator-semiconductor (MIFIS) structures is improved by combining quantum mechanics model, dipole conversion theory and semiconductor physics theory of metal oxide semiconductor structure. In this model, the interface capture state of the semiconductor surface is taken into account. By using this model, the influence of the interface trapping state on the semiconductor surface potential-voltage (φSi-V) and the MIFIS low-frequency capacitance-voltage (C-V) The results show that as the trapped state density increases, the φSi-V and C-V characteristic curves move along the positive voltage and deform, and the memory window decreases gradually. That is, the larger the trapped state density, the poorer the electrical properties of the MIFIS structure. The research is instructive in the design and fabrication of MIFIS devices.