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SiH_4-N_2系等离子增强化学气相淀积方法生长SiN(PECVD法),我们用这种方法对器件进行了钝化,并对钝化前后的器件性能进行了研究,结果表明:SiN对半导体器件具有良好的钝化效果。
SiH_4-N_2 was grown by PECVD. The PECVD method was used to passivation. The passivation of the device was conducted by this method. The device performance before and after passivation was studied. The results show that SiN has Good passivation effect.