论文部分内容阅读
采用γ-巯丙基三甲氧基硅烷(KH-590)对纳米SiO2改性,制备了表面含—SH基团的纳米SiO2杂化材料。采用红外光谱(FTIR)对改性前后纳米SiO2的结构进行了分析表征,通过热失重(TGA)分析研究了改性纳米SiO2的接枝效果,研究了纳米SiO2杂化材料对紫外光固化涂层性能的影响,利用photo-DSC分析了改性纳米SiO2杂化材料对紫外光固化固化速率的影响。结果表明,含—SH基团的有机物接枝到纳米SiO2表面,接枝率为17.6%。与纳米SiO2相比,在SiO2表面引入—SH可有效克服光固化过程的氧阻效应,同时显著地提高了SiO2/紫外光固化杂化体系的C==C双键转化率、硬度和耐磨性能等。
The nano-SiO2 was modified by γ-mercaptopropyltrimethoxysilane (KH-590) to prepare the -SH group-containing nano-SiO2 hybrid materials. The structure of the nano-SiO2 before and after modification was characterized by FTIR. The grafting effect of the modified nano-SiO2 was studied by thermal weight loss (TGA) analysis. The effect of nano-SiO2 hybrid on the UV-curable coating The effect of modified nano-SiO2 hybrid material on the curing rate of UV curing was analyzed by photo-DSC. The results showed that the organic groups containing -SH groups grafted to the surface of nano-SiO2, the grafting rate was 17.6%. Compared with the nano-SiO2, the introduction of -SH on the SiO2 surface can effectively overcome the oxygen resistance effect of the photocuring process and significantly improve the C == C double bond conversion rate, hardness and wear resistance of the SiO2 / UV light curing hybrid system Performance and so on.