【摘 要】
：
The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on the β-Ga2O3 films which are prepared by metal-organic chemical vapor deposition (MOCVD) and the γ-CuI films which are prepared by spin-coating.The fabricated heterojunction
【机 构】
：
Laboratory of Information Functional Materials and Devices,School of Science,Beijing University of P
论文部分内容阅读
The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on the β-Ga2O3 films which are prepared by metal-organic chemical vapor deposition (MOCVD) and the γ-CuI films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage (Voc) of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet (UV) light,when the bias voltage is-5 V,the dark current (Idark)of the device is 0.47 pA,the photocurrent (Iphoto) is-50.93 nA,and the photo-to-dark current ratio (Iphoto/Idark) reaches about 1.08× 105.The device has a stable and fast response speed in different wavelengths,the rise time (τr) and decay time (τd) are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While the τr and τd are 10.709 s and 7.241 s under 365-nm UV light illumination,respectively.The time-dependent (I-t) response (photocurrent in the order of 10-10 A) can be clearly distinguished at a small light intensity of 1 μW.cm-2.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.
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