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本文建立了一套用于ＭＯＳ电容热载流子损伤研究的自动测试分析系统，用高频和准静态Ｃ－Ｖ技术，分析研究了栅介质中Ｆ离子的引入所具有的抑制Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ高场应力损伤的特性，对Ｆ离子和高场应力作用机制进行了讨论．
In this paper, an automatic test and analysis system for the study of hot carrier damage in MOS capacitors has been established. By using the high-frequency and quasi-static C-V technology, the Fowler-Nordheim high field The characteristics of stress damage, F ion and high field stress mechanism are discussed.