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采用脉冲激光烧蚀(PLA)技术,在半圆环衬底上制备了含有纳米晶粒的硅(Si)晶薄膜。分析了纳米Si晶粒尺寸和阻尼系数随角度和压强的变化关系。使用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和拉曼光谱仪(Raman)对其表面形貌和结构进行了表征。结果表明,在压强一定的情况下,纳米Si晶粒的尺寸和阻尼系数均相对于轴向呈对称分布,并随着偏离轴向角度的增加而减小;同时随着压强增大,晶粒尺寸和阻尼系数在各个角度处的值均增大。
A pulsed laser ablation (PLA) technique was used to fabricate a thin film of silicon (Si) containing nanocrystalline grains on a semi-circular ring substrate. The relationship between the grain size and damping coefficient of nano-Si with the angle and pressure was analyzed. The surface morphology and structure were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The results show that under certain pressure, the size and damping coefficient of nano-Si are both symmetrical with respect to the axial direction and decrease with the increase of the deviation from the axial angle. At the same time, as the pressure increases, The values of the dimensions and damping coefficients increase at all angles.