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为了提高真空系统内一种加热器的温度场分布均匀性,利用有限元分析方法,借助ANSYS Workbench仿真温度场,通过对单圈钨丝结构外加圆倒角釜结构上的改进,确定了获取均匀的温度场的方法。在电阻丝加热功率为45 W,对直径50.8 mm的蓝宝石晶元加热温度均达到200℃的情况下,分别对两种加热器进行了仿真分析。结果表明:单圈钨丝结构外加圆倒角釜的加热器对晶元加热的温度场均匀性较差,温度差异为41.13℃。多圈钨丝螺旋结构外加抛物面釜对晶元加热的温度场均匀性较好,温度差异仅为2.30℃,可作为真空系统内一种理想的高均匀性加热器结构。对GaN阴极均匀性的检测表明:通过改进加热器结构,使得制作的GaN光阴极发射不均匀性由原来的28%改善为小于10%。研究成果为真空系统内部加热器的优化改进提供技术支撑。
In order to improve the uniformity of the temperature distribution of a heater in a vacuum system, the finite element analysis method was used to simulate the temperature field with ANSYS Workbench. Through the structural improvement of a single-turn tungsten wire structure plus round chamfering pot, The method of temperature field. In the case of heating wire resistance of 45 W and sapphire wafer diameter of 50.8 mm both reached 200 ℃, the simulation analysis of the two heaters was carried out respectively. The results show that the uniformity of the temperature field of the heater for the single round tungsten wire structure plus round chamfering kettle is poor, and the temperature difference is 41.13 ℃. The multi-turn tungsten spiral structure plus the parabolic pot has a good uniformity of the temperature field of the wafer heating, with a temperature difference of only 2.30 ° C., which can be used as an ideal high-uniformity heater structure in the vacuum system. The investigation of the uniformity of GaN cathode shows that by improving the structure of the heater, the unevenness of the fabricated GaN cathode emission is improved from 28% to less than 10%. The research results provide technical support for the optimization and improvement of the internal heater in the vacuum system.